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1.5mm Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial

1.5mm Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial

Silicon carbide (SiC), also known as carborundum, is a […]

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Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

Property4H-SiC, Single Crystal6H-SiC, Single Crystal
Lattice Parametersa=3.076 Å c=10.053 Åa=3.073 Å c=15.117 Å
Stacking SequenceABCBABCACB
Mohs Hardness≈9.2≈9.2
Density3.21 g/cm33.21 g/cm3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Index @750nmno = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constantc~9.66c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
 
Thermal Conductivity (Semi-insulating)a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap3.23 eV3.02 eV
Break-Down Electrical Field3-5×106V/cm3-5×106V/cm
Saturation Drift Velocity2.0×105m/s2.0×105m/s
sic parameter
5abe6147ca092a18cd0e74cc0952961 1.5mm Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
sic parameter

CATALOGUE COMMON SIZE  In OUR INVENTORY LIST   

 4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots
4H Semi-insulating /  High Purity SiC wafer
2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer 
 6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 
 Customzied size for 2-6inch  
silicon carbide wafer

Application areas

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
9760e66cc616e886088c4708ca0eaba 1.5mm Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial

>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

Hefda486cf4734ebb8964426b9cbfbf71N 1.5mm Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial

FAQ

Q1. Are you a factory?

A1. Yes, we are a professional manufacturer of optical components, we have more than 8years experience in wafers and optical lens process. 

Q2. What is the MOQ of your products?

A2. No MOQ for customer if our product is in stock, or 1-10pcs.  

Q3:Can I custom the products based on my requirement?

A3.Yes, we can custom the material, specifications and optical coating for your optical components as your requirement.  

Q4. How can I get sample from you?

A4. Just send us your requirements, then we will sendsamples accordingly.  

Q5. How many days will samples be finished? How about mass products?

A5. Generally, we need 1~2 weeks to finish the sample production. As for the mass products, it depends on your order quantity. 

Q6. What’s the delivery time?

A6.

(1)For inventory: the delivery time is 1-3 working days.

(2) For customized products: the delivery time is 7 to 25 working days.
According to the quantity.  

Q7. How do you control the quality?

A7. More than four times quality inspect during production process,we can provide the Quality test report.  

Q8. How about your optical lens production ability per Month?

A8. About 1,000pcs/Month.According to the detail requirement.


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