12inch C-aixs Al2O3 Sapphire Wafer double side polished

12inch C-aixs Al2O3 Sapphire Wafer double side polished。

8inch/6inch/5inch/ 2inch /3inch 4inch /5inch  C-axis/ a-axis/  r-axis/ m-axis 6″/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thicknessdiameter300mm 12inch Al2O3 Sapphire wafers carrier with notch SSP DSP 1.0mm C – Axis sapphire optical glass windows.

Material:	Sapphire Single Crystal	Orientation:	C-axis
Surface:	Ssp Or Dsp	Thickness:	1.5mm Or Customized
Application:	Led Or Optical Glass Or GaAs Growth Carrier Wafer	Growth Method:	Ky
OF:	With Notch
High Light:	Al2O3 Sapphire Wafer, 12 Inch Sapphire Wafer, DSP Sapphire Substrate

About synthetic sapphire crystal

Sapphire Properties

GENERAL
Chemical Formula		Al2O3
Crystal Stucture		Hexagonal System ((hk o 1)
Unit Cell Dimension		a=4.758 Å,Å c=12.991 Å, c:a=2.730
PHYSICAL
		Metric	English (Imperial)
Density		3.98 g/cc	0.144 lb/in3
Hardness		1525 – 2000 Knoop, 9 mhos	3700° F
Melting Point		2310 K (2040° C)
STRUCTURAL
Tensile Strength		275 MPa to 400 MPa	40,000 to 58,000 psi
	at 20°	400 MPa	58,000 psi (design min.)
	at 500° C	275 MPa	40,000 psi (design min.)
	at 1000° C	355 MPa	52,000 psi (design min.)
Flexural Stength		480 MPa to 895 MPa	70,000 to 130,000 psi
Compression Strength		2.0 GPa (ultimate)	300,000 psi (ultimate)

The Kyropoulos process (KY process) for sapphire crystal growth is currently used by many companies in China to produce sapphire for the electronics and optics industries.
High-purity, aluminum oxide is melted in a crucible at over 2100 degrees Celsius. Typically the crucible is made of tungsten or molybdenum. A precisely oriented seed crystal is dipped into the molten alumina. The seed crystal is slowly pulled upwards and may be rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the melt.
After single crystal sapphire boules are grown, they are core-drilled into cylindrical rods, The rods are sliced up into the desired window thickness and finally polished to the desired surface finish.

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Use as substrate for semiconducting circuits：

Thin sapphire wafers were the first successful use of an insulating substrate upon which to deposit silicon to make the integrated circuits known as silicon on sapphire or “SOS”, Besides its excellent electrical insulating properties, sapphire has high thermal conductivity. CMOS chips on sapphire are especially useful for high-power radio-frequency (RF) applications such as those found in cellular telephones, public-safety band radios, and satellite communication systems.
Wafers of single-crystal sapphire are also used in the semiconductor industry as substrates for the growth of devices based on gallium nitride (GaN). The use of sapphire significantly reduces the cost, because it has about one-seventh the cost of germanium. Gallium nitride on sapphire is commonly used in blue light-emitting diodes (LEDs).

Used as a window material:

Synthetic sapphire (sometimes referred to as sapphire glass) is commonly used as a window material, because it is both highly transparent to wavelengths of light between 150 nm (UV) and 5500 nm (IR) (the visible spectrum extends about 380 nm to 750 nm, and extraordinarily scratch-resistant. The key benefits of sapphire windows are:
* Very wide optical transmission band from UV to near-infrared
* Significantly stronger than other optical materials or glass windows
* Highly resistant to scratching and abrasion (9 on the Mohs scale of mineral hardness scale, the 3rd hardest natural substance next to moissanite and diamonds)
* Extremely high melting temperature (2030 °C)

CATALOGU  ＆ Stcok List 

Standard wafer(customzied)2 inch C-plane sapphire wafer SSP/DSP 3 inch C-plane sapphire wafer SSP/DSP 4 inch C-plane sapphire wafer SSP/DSP 6 inch C-plane sapphire wafer SSP/DSP	Special Cut A-plane (1120) sapphire wafer R-plane (1102) sapphire wafer M-plane (1010) sapphire wafer N-plane (1123) sapphire wafer C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis Other customized orientation
Customized Size 10*10mm sapphire wafer 20*20mm sapphire wafer Ultra thin (100um) sapphire wafer 8 inch sapphire wafer	Patterned Sapphire Substrate (PSS) 2 inch C-plane PSS 4 inch C-plane PSS

2inch	DSP C-AXIS  0.1mm/0.175mm/0.2mm/0.3mm/0.4mm/0.5mm/  1.0mmt   SSP C-axis  0.2/0.43mm(DSP＆SSP) A-axis/M-axis/R-axis 0.43mm
3inch	DSP/ SSP C-axis 0.43mm/0.5mm
4Inch	dsp   c-axis 0.4mm/ 0.5mm/1.0mmssp  c-axis  0.5mm/0.65mm/1.0mmt

6inch

ssp c-axis  1.0mm/1.3mmm dsp c-axis  0.65mm/ 0.8mm/1.0mmt

Specification for substrates

Orientation	R-plane, C-plane, A-plane, M-plane or a specified orientation
Orientation Tolerance	± 0.1°
Diameter	2 inches, 3 inches, 4 inches, 5inch,6 inches, 8 inches or others
Diameter Tolerance	0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches
Thickness	0.08mm,0.1mm,0.175mm,0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others;
Thickness Tolerance	5μm
Primary Flat Length	16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches
Primary Flat Orientation	A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2°
TTV	≤7µm for 2 inches, ≤10µm for 3 inches, ≤15µm for 4 inches, ≤25µm for 6 inches
BOW	≤7µm for 2 inches, ≤10µm for 3 inches, ≤15µm for 4 inches, ≤25µm for 6 inches
Front Surface	Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations)
Back Surface	Fine ground (Ra=0.6μm~1.4μm) or Epi-polished
Packaging	Packaged in a class 100 clean room environment

Products Detail

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