5um Thickness AlN Aluminum Nitride Template 430 um Sapphire 350 um Sic Substrates
2” AlN Templates–4 inch Item AlN-T Dimensi […]
| 2” AlN Templates–4 inch | ||
| Item | AlN-T | |
| Dimensions | Ф 2” | |
| Substrate | Sapphire, SiC, GaN | |
| Thickness | 4-5um | |
| Orientation | C-axis(0001) ± 1° | |
| Conduction Type | Semi-Insulating | |
| Dislocation Density | XRD FWHM of (0002) < 200 arcsec. | |
| XRD FWHM of (10-12) < 1000 arcsec | ||
| Useable Surface Area | > 80% | |
| Polishing | Standard: SSP | |
| Option: DSP | ||
| Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
5um Thickness AlN Aluminum Nitride Template 430 um Sapphire 350 um Sic Substrates
We offer single crystalline AlN substrates on c-plane sapphire template,which called AlN wafer or AlN template,for UV LEDs, semiconductor devices and AlGaN epitaxial growth.Our epi-ready, C-plane AlN substrates have good XRD FWHM or dislocation density. The available thickness is from 30nm to 5um.
Our single crystal Aluminum Nitride substrates with low dislocation has widely application:including UV LED,detectors, IR seekers windows, epitaxial growth of III-nitrides,Laser, RF transistors and other semiconductor device.
Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.
AlN template is used for development of HEMT structures, resonant tunneling diodes and acoustoelectronic devices
Application of 5um Thickness AlN Aluminum Nitride Template 430 um Sapphire 350 um Sic Substrates
GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.
- High- Frequency Microwave Devices High-energy Detection and imagine
- New energy solor hydrogen technology Environment Detection and biological medicine
- Light source terahertz band
- Laser Projection Display, Power Device, etc. Date storage
- Energy-efficient lighting Full color fla display
- Laser Projecttions High- Efficiency Electronic devices
Not Just GaN Wafer
Sapphire Wafers, SiC Wafers, Silicone Wafers, GaAs…
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaN material is the restraining factor for the III-nitrides application, e.g. long life
and high stability LEDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.
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