4Inch Silicon Carbide Substrate , High Purity Prime Dummy Ultra Grade 4H- Semi SiC Wafers
PROPERTIES of 4H-SiC Single Crystal Lattice Parameters: […]
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PROPERTIES of 4H-SiC Single Crystal
- Lattice Parameters: a=3.073Å c=10.053Å
- Stacking Sequence: ABCB
- Mohs Hardness: ≈9.2
- Density: 3.21 g/cm3
- Therm. Expansion Coefficient: 4-5×10-6/K
- Refraction Index: no= 2.61 ne= 2.66
- Dielectric Constant: 9.6
- Thermal Conductivity: a~4.2 W/cm·K@298K
- (N-type, 0.02 ohm.cm) c~3.7 W/cm·K@298K
- Thermal Conductivity: a~4.9 W/cm·K@298K
- (Semi-insulating) c~3.9 W/cm·K@298K
- Band-gap: 3.23 eV Band-gap: 3.02 eV
- Break-Down Electrical Field: 3-5×10 6V/m
- Saturation Drift Velocity: 2.0×105m/
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
CATALOGUE COMMON SIZE
| 4H-N Type / High Purity SiC wafer/ingots2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 4H Semi-insulating / High Purity SiC wafer2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
| 6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
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