Semiconductor Crystal Substrate Wafer

Shanghai Xinkehui New Material have our own factory in Shanghai, China. we can supply the Sapphire, SiC, GaN, GaAs, Silicon and other semiconductor wafers. The Details of our sapphire, SiC, GaN wafer in stock as following:

Sapphire Wafer

• 2 inch 0.43 mm thickness C-plane DSP/SSP, MOQ 25 pcs;
• 2 inch 0.43 mm thickness A-plane DSP/SSP, MOQ 25 pcs;
• 2 inch 0.43 mm thickness M-plane DSP/SSP, MOQ 25 pcs;
• 2 inch 0.43 mm thickness R-plane DSP/SSP, MOQ 25 pcs;
• 3 inch 0.5 mm thickness C-plane DSP/SSP, MOQ 25 pcs;
• 4 inch 0.65 mm thickness C-plane DSP/SSP, MOQ 25 pcs;
• 6 inch 1.0 mm thickness C-plane DSP/SSP, MOQ 10 pcs;

GENERAL
Chemical Formula	Al2O3
Crystal Stucture	Hexagonal System (hk o 1)
Unit Cell Dimension	a=4.758 Å,Å c=12.991 Å, c:a=2.730
PHYSICAL
	Metric	English (Imperial)
Density	3.98 g/cc	0.144 lb/in3
Hardness	1525 – 2000 Knoop, 9 mhos	3700° F
Melting Point	2310 K (2040° C)
STRUCTURAL
Tensile Strength	275 MPa to 400 MPa	40,000 to 58,000 psi
Tensile Strength at 20° C		58,000 psi (design min.)
Tensile Strength at 500° C		40,000 psi (design min.)
Tensile Strength at 1000° C	355 MPa	52,000 psi (design min.)
Flexural Stength	480 MPa to 895 MPa	70,000 to 130,000 psi
Compression Strength	2.0 GPa (ultimate)	300,000 psi (ultimate)

SiC Wafer

• 4 inch 4h-n type 0.35 mm thickness DSP Dummy grade, MOQ 1 pcs;
• 4 inch 4h-n type 0.35 mm thickness DSP Production grade, MOQ 1 pcs;
• 4 inch 4h-n type 0.35 mm thickness DSP Prime Zero grade, MOQ 1 pcs;
• 6 inch 4h-n type 0.35 mm thickness DSP Dummy grade, MOQ 1 pcs;
• 6 inch 4h-n type 0.35 mm thickness DSP Production grade, MOQ 1 pcs;

Grade	Zero MPD Grade	Production Grade	Research Grade	Dummy Grade
Diameter	100. mm±0.2 mm or other customized size
Thickness	1000±25 um Or other customized thickness
Wafer Orientation	Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density	≤0 cm-2	≤2 cm-2	≤5 cm-2	≤30 cm-2
Resistivity 4H-N	0.015~0.028 Ω•cm
Resistivity 4/6H-SI	≥1E7 Ω·cm
Primary Flat	{10-10}±5.0° or round shape
Primary Flat Length	18.5 mm±2.0 mm or round shape
Secondary Flat Length	10.0mm±2.0 mm
Secondary Flat Orientation	Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion	1 mm
TTV/Bow /Warp	≤10μm /≤10μm /≤15μm
Roughness	Polish Ra≤1 nm / CMP Ra≤0.5 nm
Cracks by high intensity light	None	1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light	Cumulative area ≤1%	Cumulative area ≤1%	Cumulative area ≤3%
Polytype Areas by high intensity light	None	Cumulative area ≤2%	Cumulative area ≤5%
Scratches by high intensity light	3 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length
edge chip	None	3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

GaN Wafer

• 2inch Free-standing HVPE GaN substrate 0.4 mm thickness DSP Dummy grade, MOQ 1 pcs;
• 2inch Free-standing HVPE GaN substrate 0.4 mm thickness DSP Research grade, MOQ 1 pcs;

Free-standing GaN Substrates (2”)
Item	JF-261NA-M3/JF-261NA-A2
Size(mm)	50.0±0.5
Thickness(um)	400±25
TTV(um)	≤15
BOW(um)	≤20
RMS(nm)	Ga face:RMS,0.2 nm(10um*10um);N face: Lapped and etched
Orientation	C-plane(0001) off angle toward M-axis/A-axis 0.3±0.25
Conduction Type	Doped N-type
Resistivity (Ω.cm)	≤0.05
Carrier Concentration(cm∧-3)	≥1*10∧18
Dislocation Density(cm∧-2)	≤5*10∧6
FWHM(arcsec)	≤120
Useable Surface Area	>90%

Related Semiconductor Products

besides the sapphire,SiC,GaN, we also can supply GaAs, silicon, GaP…

Shanghai Xinkehui New Material

———-professional semiconductor wafer supplier