Customized High Quality High Precision SiC Spherical Mirror Metal Optical Reflector
High Quality Silicon-on-Insulator Wafers SIC Silicon Ca […]
High Quality Silicon-on-Insulator Wafers SIC Silicon Carbide Wafers Customized High quality high precision Dia.700mm Sic spherical Mirror metal optical reflector Customized High quality Dia.500mm silver-plated spherical reflector metal optical reflector 2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers,
| Product Name | Metal Plane Mirror |
| Material | Monocrystalline Silicon |
| Diameter | 500mm |
| Surface Quality | 60-40 |
| Surface Accuracy | PV:1/4 Lambda;RMS:1/30 Lambda |
| Coating | Reflectivity>90%Coating Film:@200-1100nm |
| Application | Reflecting System |
High precision Optical Components Custom-made Parameter List
| S/No. | Classification | Product Name | Diameter | Surface Accuracy | Surface Treatment/Coating | |
| 1 | Normal Optical Element/ Component Series | Plane/Flat Mirror | Φ50~Φ1200mm | ≤0.2nm | 0.01μm | 1: Metal Film,Medium Film；2:Ultraviolet Film,Visible Film,Infrared Film,etc；3:Reflection Film, Antireflection Film,Spectroscopic Film, Polarization Film,Strong Laser Film,etc； |
| Spherical Mirror | Φ50~Φ1200mm | ≤0.2nm | 0.01μm | |||
| Prism | Φ50~Φ1200mm | ≤0.2nm | 0.01μm | |||
| 2 | Complicated Optical Element/ Component Series | Symmetrical Aspherical Mirror | Φ50~Φ1200mm | ≤1nm | 0.06μm | |
| Off-axis Parabolic/ Aspherical Mirror | Φ50~Φ1200mm | ≤2nm | 0.1μm | |||
| 3 | Special Optical Component Series | Free-form Mirror | Φ50~Φ1200mm | ≤1nm | 0.06μm | |
| Utra-thin Optical Element | 0.5~3mm thickness | 0.06μm | N/A | |||
| Remark | 1: Can customize based on your requirements;2: Material including:1)Normal Optical Glass(Quartz, Microcrystalline,K9 ,UBK7,etc)； 2)Infrared Optical Material(Monocrystalline Silicon,Germanium (Ge),Galcium Fluoride, Zinc Sulfide, etc)；3)Superhard Materials (Sapphire, Silicon Carbide /SiC, Alumina)；4)Metal(Aluminum, Copper, Titanium Alloy,etc)；5)Crystal Materials (YAG, KDP,etc)； 6)Others. |
Compared with silicon devices, silicon carbide (SiC) power devices can effectively achieve high efficiency, miniaturization and light weight of power electronic systems. The energy loss of SiC power devices is only 50% of Si devices, and the heat generation is only 50% of silicon devices, SiC also has a higher current density. At the same power level, the volume of SiC power modules is significantly smaller than that of silicon power modules. Taking the intelligent power module IPM as an example, using SiC power devices, the module volume can be reduced to 1/3 to 2/3 of silicon power modules.
There are three types of SiC power diodes: Schottky diodes (SBD), PIN diodes and junction barrier controlled Schottky diodes (JBS). Because of the Schottky barrier, SBD has a lower junction barrier height, so SBD has the advantage of low forward voltage. The emergence of SiC SBD has enlarged the application range of SBD from 250V to 1200V. In addition, its characteristics at high temperature are good, the reverse leakage current not increases from room temperature to 175 ° C. In the application field of rectifiers above 3kV, SiC PiN and SiC JBS diodes have received much attention due to their higher breakdown voltage, faster switching speed, smaller size and lighter weight than silicon rectifiers.
SiC power MOSFET devices have ideal gate resistance, high-speed switching performance, low on-resistance, and high stability. It is the preferred device in the field of power devices below 300V. There are reports that a silicon carbide MOSFET with a blocking voltage of 10kV has been successfully developed. Researchers believe that SiC MOSFETs will occupy an advantageous position in the field of 3kV – 5kV.
SiC Insulated Gate Bipolar Transistors (SiC BJT, SiC IGBT) and SiC Thyristor (SiC Thyristor), SiC P-type IGBT devices with a blocking voltage of 12 kV have good forward current capability. Compared with Si bipolar transistors, SiC bipolar transistors have 20-50 times lower switching losses and lower turn-on voltage drop. SiC BJT is mainly divided into epitaxial emitter BJT and ion implantation emitter BJT, the typical current gain is between 10-50.
| Properties | unit | Silicon | SiC | GaN |
| Bandgap width | eV | 1.12 | 3.26 | 3.41 |
| Breakdown field | MV/cm | 0.23 | 2.2 | 3.3 |
| Electron mobility | cm^2/Vs | 1400 | 950 | 1500 |
| Drift valocity | 10^7 cm/s | 1 | 2.7 | 2.5 |
| Thermal conductivity | W/cmK | 1.5 | 3.8 | 1.3 |
FAQ:
Q: What’s the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) it is fine If you have your own express account ,If not,we could help you ship them and
Freight is in accordance with the actual settlement.
Q: How to pay?
A: T/T 100％ deposit before delivery.
Q: What’s your MOQ?
A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it’s better.
(2) For customized commen products, the MOQ is 10pcs up.
Q: What’s the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 -4 weeks after you order contact.
Q: Do you have standard products?
A: Our standard products in stock. as like substrates 4inch 0.35mm.
Send Inquiry
