POSITON:Xinkehui » Products» Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500 um
Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500 um

Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500 um

Ge wafer for microelectronic application N type,&n […]

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Ge wafer for microelectronic application

N typeSb doped Ge wafer
N type,undoped Ge wafer
P type,Ga doped Ge wafer
Available size:2”-6”
Available orientation: (100),(111),or custom specs.
Available grade: IR grade, electronic grade and cell grade
Resistivity:
N – type : 0.007-30 ohm-cm
P – type : 0.001-30 ohm-cm
Undoped : >=30 ohm-cm
Surface: as-cut, single side polished, double side polished

Single Crystal Germanium Wafer Capability

we can offer both electronics grade and IR grade Ge wafer and Ge ingot , please contact us for more Ge product information .

ConductivityDopantResistivity
( ohm-cm )
Wafer Size
NAUndoped>= 30Up to 4 inch
N typeSb0.001 ~ 30Up to 4 inch
P typeGa0.001 ~ 30Up to 4 inch
20201206193308_47038 Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500 um
20201206193332_68874 Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500 um

Ge wafer is an elemental and popular semiconductor material , due to its excellent crystallographic properties and unique electric properties , Ge wafer is widly used in Sensor , Solar cell and Infrared optics applications .

We can provide low dislocation and epi ready Ge wafers to meet your unique requirement. Ge wafer is produced as per semiconductor,with a good quality control system ,  ZMKJ Is dedicated to providing clean and high quality Ge wafer products .

we can offers both electronics grade and IR grade Ge wafer , please contact us for more Ge product information.

In the range of 2-12 μm, germanium is the most commonly used material for the production of spherical lenses and windows for high efficiency infrared in imaging system. Germanium has a high refractive index (about 4.0 through 2-14μm band), usually do not need to be modified due to its low chromatic aberration in low power imaging systems.

SL.NoMaterial Specifications: 
1Crystalline Form :Polycrystalline
2Conductivity Type :n-type
3Absorption Coefficient, at 25°C0.035cm-1 max @10.6µm
4Typical Resistivity :3-40 ohm-cm
5Density :5.3 g/cc
6Mohs Hardness :6.3
7Oxygen Content :< 0.03 ppm
8Holes and Inclusions:<0.05 mm
9Poisson Ratio :0.278
10Youngs Modulus (E) :100 Gpa
   
SL.NoOptical Properties: 
1dn/dt from 250-350 K :4 X 10-4 K-1
2Transmission at 25°C @10.6 µm wavelength 
 for uncoated sample of thickness 10mm :Max. 47% or more
3Refractive Index @ 10.8 µm :4.00372471±0.0005
   
SL.NoThermal Properties 
1Melting Point (K) :1210.4
2Heat Capacity @ 300K (J/kg.K):322
3Thermal Conductivity @293 K :59 Wm-1 K-1
4Coefficient Thermal Expansion @ (20°C) (10-6 K):5.8
20220311182525_56862 Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500 um
20201206193953_82766 Dia 50.8mm Ge Wafers Semiconductor Substrate Ga Doped Substrate N Type 500 um

Q: Do you provide samples? Is it free or charged?
· We’d like to supply samples for free if we have it in stock, but we don’t pay freight.
Q: How long is your delivery time?
· Regarding inventory, it is 3 working days;
· For customized one, it’s about 15-25 working days, depended on exact quantity and order date.
Q: Is it possible to customize special lens?
· Yes, to customize special optical element and coating are available here.
Q: How to pay?
· T/T, Alibaba online assurance payment, MoneyGram, West Union, Paypal and so on.


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