VGF 6 Inch N Type GaAs Semiconductor Substrate For Epitaxial Growth

VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth

GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the semiconductor industry. Less power consumption and more efficiency offered by this GaAs wafers are attracting the market players to adopt these wafers, thereby increasing the demand for GaAs wafer. Generally, this wafer is used to manufacture semiconductors, light emitting diodes, thermometers, electronic circuits, and barometers, besides finding application in the manufacturing of low melting alloys. As the semiconductor and electronic circuit industries continue to touch new peaks, the GaAs market is booming. Gallium arsenide of GaAs wafer has the power of generating laser light from electricity. Especially polycrystalline and single crystal are the two major type of GaAs wafers, which are utilized in the production of both the microelectronics and optoelectronics to create LD, LED, and microwave circuits. Therefore, the extensive range of GaAs applications, particularly in optoelectronics and microelectronics industry is creating a demand influx in the GaAs Wafer Market. Previously, the optoelectronic devices were mainly used on a broad range in short-range optical communications and computer peripherals. But now, they are in demand for some emerging applications such as LiDAR, augmented reality, and face recognition. LEC and VGF are two popular methods which are improving the production of GaAs wafer with high uniformity of electrical properties and excellent surface quality. Electron mobility, single junction band-gap, higher efficiency, heat and moisture resistance, and superior flexibility are the five distinct advantages of GaAs, which are improving the acceptance of GaAs wafers in the semiconductor industry.